尊龙凯时

CN EN
Home
About Us
Newpros
New N100V MOSFET for PD Power Supply
New N100V MOSFET for PD Power Supply Back
PDF

Introduction YangJie technology recently launched a series of N100V mosfet products for PD power supplies.The products adopt specially optimized SGT technology, with low Rdson and Qg, significantly reducing forward voltage drop and switching losses,while enhancing the avalanche resistance of the mosfet.
Features 1.The product utilizes optimized SGT technology, featuring low on-resistance and excellent switching performance.
2.The product adopts PDFN5*6-8L package, suitable for PD power synchronous rectifier applications
3.For various working states of power supply applications, optimize the EAS capability of MOS products to enhance their reliability.
SPECIFICATION

YJG4D6G10H YJG5D2G10H YJG6D3G10H YJG7D4G10H YJG8D0G10H

Related new products

JC

SGT N80-85V Power MOSFET

IGBT Micro Trench Discrete for PV/Eenergy Storage/ EV Charger Application

IGBT high frequency series C1 module

SOD-323FL Schottky

High frequency C3 IGBT Module

100V TOLL Package MOSFET

80A/1200V IGBT Discrete for Automotive PTC

Low VCE(sat)?3A?Bipolar?Transistor

IGBT Fast Series
网站地图