尊龙凯时

CN EN
Home
About Us
Newpros
IGBT Micro Trench Discrete for PV/Eenergy Storage/ EV Charger Application
IGBT Micro Trench Discrete for PV/Eenergy Storage/ EV Charger Application Back
PDF

Introduction 1、TO-247package 50A 650V IGBT discrete ;
2、The voltage level is 650V, the current level is 50A@Tc=100℃ ;
3、It is mainly used for PV/Eenergy Storage/ EV charger and other high-frequency applications ;
4、Low conduction loss, low switching loss, high reliability ;
5、Use environmentally friendly materials and meet RoHS standards ;
Features 1、Tjmax=175℃;
2、Positive temperature coefficient ;
3、High voltage 650V ;
4、Low conduction loss, low switching loss, meet the high frequency application conditions ;
5、The latest generation of micro trench design, a cost-effective product ;
SPECIFICATION

DGW50N65CTL0

Related new products

IGBT 50A/75A 1200V Discrete for Industrial Control

Three-phase Rectifier Module N5/N6

SOD-323HE Diode for Automotive 、Home Appliances, Etc

TO-252 Package Power Transistor for Motor Driver & High Power Frequency Converter

SOD-123HE TVS Diode

SOD-123FL package power ESD

SOT-227 FJ Package Vehicle Module

IGBT Discrete For PTC of Auto Industry

SOD-123HE SMD Type TVS Products

IGBT 50A 1200V Discrete for Industrial Control
网站地图