尊龙凯时

CN EN
Home
About Us
Newpros
New 100V 3.2mΩ SGT MOSFET for PD power supply
New 100V 3.2mΩ SGT MOSFET for PD power supply Back
PDF

Introduction In recent years, the rapid popularity of various high-current charging protocols in the field of PD power supplies has made the FOM value of synchronous rectifier MOSFETs more stringent. Yangjie Technology launched advanced Copper Clip PDFN5060 package products YJG120G10AR/YJG120G10BR, reducing the packaging resistance of traditional PDFN5060 at the same time, reduce the package parasitic parameters, improve the heat dissipation capacity, to bring customers a better choice.
Features ? Using the SGT process, lower Rds (on) and Qg are obtained, resulting in lower FOM and reduced system losses in PD schemes
? Compared with traditional PDFN5060 package, Clip product has strong overcurrent capability, low thermal resistance, and a wider range of SOA to cope with various abnormal working conditions in PD power supply
SPECIFICATION

YJG120G10BR YJG120G10AR

Related new products

SGT N80-85V Power MOSFET

TOLL Package SiC MOSFET

NP – sealed MOSFET for cooling fan

New 100V 3.2mΩ SGT MOSFET for PD power supply

Micro-pattern Trenches IGBT for Photovoltaic Inverter & Energy Storage Inverter

SGT N60V MOSFET for Clean Energy Field

Three-phase Rectifier Module N5/N6

SOD-323HE Package Transient Voltage Suppressors

C2&E3 IGBT Modules for Variable-frequency Drive

SGT MOSFET for PV Microinverter
网站地图